Saturday, February 24, 2018
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
IBM Researchers Talk About the Future of EUV at SPIE
Xiaomi and Microsoft Expand Their Collaboration in cloud, Devices and AI Areas
Google's Augmented Reality SDK ARCore 1.0 Released, Google Lens Updated
Google Assistant is Going Global
TEAC Releases New Reference Series Hi-Res Audio Models
First Affordable Android Go Smartphones Coming Next Week
Samsung Breaks Ground on New EUV Line in Hwaseong
Samsung Max Android Application Offering Mobile Data Saving Mode and Privacy
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Thursday, June 23, 2005
Samsung to Produce 1Gb DDR2 DRAM Using 90 nm Process Technology


Samsung Electronics announced that it has begun mass producing a monolithic 1 Gigabit (Gb) DRAM chip using 90 nanometer (nm) processing.

Samsung expects the 90nm 1Gb DRAM to become the leading memory product over the next two years. It has lower power consumption, is much less prone to overheating, provides much greater signal integrity and delivers the best overall performance of any DRAM chip today.

"By rapidly moving to 90nm production technology in the production of 1Gb main memory, we are leading the way in attaining the highest density modules afforded by smaller geometries and accompanying manufacturing refinements," said Jon Kang, senior vice president, technical marketing, Samsung Semiconductor Inc., a U.S. subsidiary of Samsung Electronics.

The 1Gb DRAM is a rapidly growing part of Samsung's memory business, both in DDR1 and DDR2 memory chips. By the fourth quarter of this year, the company will be ramping monthly production of 1Gb DRAM using the 90nm process.

Last month, the Samsung 90nm 1Gb DDR2 400/533 DRAM chip passed Intel Corporation's supplier component validation testing, after completing the company's own component qualification process.

Further increasing its economies of scale, Samsung has integrated its 90nm processes to allow the use of a "combo die" methodology for varying production levels of 1Gb DDR1 and 1Gb DDR2 by changing masks. Samsung will manufacture high-density modules with x4, x8 and x16 versions of the new 90nm 1Gb monolithic device for the server market to take full advantage of 64-bit computing environments.


Previous
Next
GeForce 7800 Announcements        All News        Top 500 Supercomputer Rankings Show IBM Surge
AMD: Turion 64 bests Intel's Centrino     PC Parts News      OCZ Launches Value Pro Series

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung Max Android Application Offering Mobile Data Saving Mode and Privacy
Worldwide Sales of Smartphones Declined in 4Q, Samsung Retains First Spot
Samsung and Qualcomm Expand Foundry Cooperation on EUV Process Technology
Samsung to Cut OLED Panel Production as iPhone X Demand Slows: report
Samsung Electronics Begins Mass Production of 30.72TB SSD
Samsung Notebook 9 Pen, Notebook 9 (2018) and Notebook 7 Spin (2018) Available February 18
ISSCC: Samsung Working on 7-nm EUV SRAM, Intel Details 10-nm SRAM
Samsung SDI Aims at Cobalt-free EV Batteries
Samsung Chairman Suspect in Tax Evasion Case
China Signs MoU With Samsung on Chip Making
Samsung Introduces The Wall Professional at ISE 2018
Samsung's Lee Freed From Prison

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2018 - All rights reserved -
Privacy policy - Contact Us .