Saturday, February 06, 2016
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Samsung Loses Memory-Chip patent Trial Against Nvidia
Twitter Suspends Accounts To Combat Extremism
Apple Error Message Killing iPhones After Replacing Displays
Mozilla Pulls The Plug On Firefox Smartphone OS
CDs Remain Popular In Japan
768 Gbit Micron 3D NAND Is Faster Than Samsung’s 256Gb V-NAND: ISSCC
Apple Dominated The Smart Watch Market In 2015
Sharp Close To Get Under Foxconn's Wings Following Friday Meeting
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
How to burn a backup copy of The Frozen Throne
Help make DVDInfoPro better with dvdinfomantis!!!
Copied dvd's say blank in computer only
menu making
 Home > News > PC Parts > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Thursday, June 23, 2005
Samsung to Produce 1Gb DDR2 DRAM Using 90 nm Process Technology


Samsung Electronics announced that it has begun mass producing a monolithic 1 Gigabit (Gb) DRAM chip using 90 nanometer (nm) processing.

Samsung expects the 90nm 1Gb DRAM to become the leading memory product over the next two years. It has lower power consumption, is much less prone to overheating, provides much greater signal integrity and delivers the best overall performance of any DRAM chip today.

"By rapidly moving to 90nm production technology in the production of 1Gb main memory, we are leading the way in attaining the highest density modules afforded by smaller geometries and accompanying manufacturing refinements," said Jon Kang, senior vice president, technical marketing, Samsung Semiconductor Inc., a U.S. subsidiary of Samsung Electronics.

The 1Gb DRAM is a rapidly growing part of Samsung's memory business, both in DDR1 and DDR2 memory chips. By the fourth quarter of this year, the company will be ramping monthly production of 1Gb DRAM using the 90nm process.

Last month, the Samsung 90nm 1Gb DDR2 400/533 DRAM chip passed Intel Corporation's supplier component validation testing, after completing the company's own component qualification process.

Further increasing its economies of scale, Samsung has integrated its 90nm processes to allow the use of a "combo die" methodology for varying production levels of 1Gb DDR1 and 1Gb DDR2 by changing masks. Samsung will manufacture high-density modules with x4, x8 and x16 versions of the new 90nm 1Gb monolithic device for the server market to take full advantage of 64-bit computing environments.


Previous
Next
GeForce 7800 Announcements        All News        Top 500 Supercomputer Rankings Show IBM Surge
AMD: Turion 64 bests Intel's Centrino     PC Parts News      OCZ Launches Value Pro Series

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung Loses Memory-Chip patent Trial Against Nvidia
768 Gbit Micron 3D NAND Is Faster Than Samsung’s 256Gb V-NAND: ISSCC
Samsung Describes Its 10nm SRAM
Samsung Galaxy S7 and S7 Edge Coming At February's Unpacked 2016 Event
LG's Home Appliances Business More Profitable Than Samsung's
Samsung Reports Drop In Profit For Q4
Samsung Said To Unveil Phone Upgrade Program
Samsung SDI to Invest In Automotive Battery Business
Samsung Gear S2 Classic New Edition Launches Globally
Court Bans Sales Of Some Samsung Phones in The U.S
Samsung Begins Mass Producing 4-Gigabyte HBM2 DRAM
Samsung Announces Mass Production of 2nd Generation 14-Nanometer FinFET Logic Process Technology

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2016 - All rights reserved -
Privacy policy - Contact Us .