Thursday, April 27, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
FCC Proposes to Roll Back Regulation of the Internet
Twitter's Revenue Drops Despite User Growth
Western Digital Ships Fourth-Generation Ultrastar He12 12TB Hard Drive
Verizon's Latest Unlimited Data Plan Costs $80
LG Display Posts Record Earnings on OLED TV Sales
Google co-founder Sergey Brin Is Building Airship
Uber Faces New Setback In South Korea
Uber Takes to The Skies With Flying Taxis by 2020
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Thursday, June 23, 2005
Samsung to Produce 1Gb DDR2 DRAM Using 90 nm Process Technology


Samsung Electronics announced that it has begun mass producing a monolithic 1 Gigabit (Gb) DRAM chip using 90 nanometer (nm) processing.

Samsung expects the 90nm 1Gb DRAM to become the leading memory product over the next two years. It has lower power consumption, is much less prone to overheating, provides much greater signal integrity and delivers the best overall performance of any DRAM chip today.

"By rapidly moving to 90nm production technology in the production of 1Gb main memory, we are leading the way in attaining the highest density modules afforded by smaller geometries and accompanying manufacturing refinements," said Jon Kang, senior vice president, technical marketing, Samsung Semiconductor Inc., a U.S. subsidiary of Samsung Electronics.

The 1Gb DRAM is a rapidly growing part of Samsung's memory business, both in DDR1 and DDR2 memory chips. By the fourth quarter of this year, the company will be ramping monthly production of 1Gb DRAM using the 90nm process.

Last month, the Samsung 90nm 1Gb DDR2 400/533 DRAM chip passed Intel Corporation's supplier component validation testing, after completing the company's own component qualification process.

Further increasing its economies of scale, Samsung has integrated its 90nm processes to allow the use of a "combo die" methodology for varying production levels of 1Gb DDR1 and 1Gb DDR2 by changing masks. Samsung will manufacture high-density modules with x4, x8 and x16 versions of the new 90nm 1Gb monolithic device for the server market to take full advantage of 64-bit computing environments.


Previous
Next
GeForce 7800 Announcements        All News        Top 500 Supercomputer Rankings Show IBM Surge
AMD: Turion 64 bests Intel's Centrino     PC Parts News      OCZ Launches Value Pro Series

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung Develops Mobile Chip for IoT Applications, Eyes MRAM Embedded Memory
Samsung Galaxy S8 and S8+ Are Launching With Google Play
Samsung To Patch Galaxy S8 Display Issue
Galaxy S8 Materials Costs More Than Any Previous Versions, Teardown Reveals
Analyst Sees An Upcoming Galaxy Note8 With A Bigger Screen, Dual Cameras
Samsung To Start Producing Faster, 2nd Generation 10nm Chips By The End Of the Year
Samsung Galaxy Book 2-in-1 Available Next Month Starting $630
Samsung Says Galaxy S8's 'red-tinted' Display Is Not A Defect
Samsung's DRAM Roadmap
Samsung Galaxy S8 pre-orders Surpass S7's
Samsung Releases Gear S3 Value Pack Update
Samsung Forecasts Strong Q1 Profit, Leaves The Note 7 Fiasco Behind

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .