Thursday, October 02, 2014
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Intel Releases Internet of Things Developer Kit
Twitter Invests $10 million On MIT Project Related To Social Data Analysis
Internet Explorer and the Windows 10 Preview
ARM Announces Device Platform and Free Operating System For Internet of Things Deployment
ZOTAC Injects Palm-Sized ZBOX nano XS with Double Dose of Performance
Corsair Releases The Flash Voyager Vega Flash Drive
Mozilla Unveils Firefox-powered Matchstick Streaming Adapter
New ARM Solutions Reduce Time to Market for FinFET Designs
Active Discussions
Yamaha CRW-F1UX
help questions structure DVDR
Made video, won't play back easily
Questions durability monitor LCD
Questions fungus CD/DVD Media, Some expert engineer in optical media can help me?
CD, DVD and Blu-ray burning for Android in development
IBM supercharges Power servers with graphics chips
Werner Vogels: four cloud computing trends for 2014
 Home > News > PC Parts > Toshiba...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, June 15, 2005
Toshiba, Sony Jointly Develop 45 nm Embedded DRAM Technology


At the 2005 Symposium on VLSI Technology event, Toshiba Corp. and Sony Corp. announced an embedded DRAM process technology, which they have jointly developed at the 45 nm node.

The companies achieved the cell size of 0.069 μm2 by introducing the following three key techniques.

Firstly, Toshiba and Sony expanded the trench bottom area using technology called bottle etching, while introducing high-permittivity Al203 coating for capacitor insulation. Capacitor volume per unit area has been boosted 60% as a result, and the companies secured the capacitor volume equivalent to that of an obsolete model, while reducing the size of a capacitor.

Secondly, the companies employed a hybrid architecture combining spin on dielectric (SOD) and high-density plasma Si02 coating for trench isolation. This architecture eased STI response, reduced joint leakage and improved charge retention property. The technology also enabled to embed high aspect ratio STI devices more easily than before.

Lastly, Toshiba and Sony used Ultra Shallow Buried Strap technology, which forms Ni-salicide at joints (straps) between capacitors and transistors. This technology reduced the dimensions of a strap part and removed additional processing previously needed for conventional process technology.


Previous
Next
Microsoft Post RAW Thumbnailer and Viewer        All News        Rambus to License XDR Technology to IBM
Toshiba Announces Portable and Stylish 17" Notebook     PC Parts News      Rambus to License XDR Technology to IBM

Get RSS feed Easy Print E-Mail this Message

Related News
New Toshiba Tecra C50 Laptop Delivers Security at Affordable Price
PlayStation TV Coming October 14th
Sony Develops SmartEyeglass, Launches SDK
Toshiba to Develop New Transistor Series Using Latest Process Technology
Toshiba to Restructure Its PC Business
Sony To Offer Unity For PlayStation To PlayStation Licensed Developers
Sony Slashes Guidance Due To Poor Smartphone Sales
Toshiba 2014 4K UHD Models Now Available
Toshiba and SanDisk Celebrate the Opening of the Second Phase of Fab 5 and Start Construction of New Fab 2 Semiconductor Fabrication Facility
Sony Smart EyeGlass Prototype Appears At IFA
New Sony Camera Shoots In The Dark
Sony Unveils New Xperia Z3, Z3 Compact And More at IFA

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2014 - All rights reserved -
Privacy policy - Contact Us .