Wednesday, January 17, 2018
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
U.S. State Attorneys General Sue to Block Net-neutrality Repeal
Chinese Automaker Chery to Use NVIDIA SoC for Level 3 Autonomous Cars
Samsung Thrive App Will Notify Your Friends When You Are Offline
Maersk and IBM to Apply Blockchain to Improve Global Trade
Qualcomm Urges to Stockholders Reject Broadcom's Takeover Offer
Western Digital Delivers New G-Technology G-SPEED Shuttle Solutions to content Creators
Google Expands Global Cloud Infrastructure With New Regions and Subsea Cables
New Pioneer DDJ-1000 Controller Designed for rekordbox dj
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > Toshiba...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, June 15, 2005
Toshiba, Sony Jointly Develop 45 nm Embedded DRAM Technology


At the 2005 Symposium on VLSI Technology event, Toshiba Corp. and Sony Corp. announced an embedded DRAM process technology, which they have jointly developed at the 45 nm node.

The companies achieved the cell size of 0.069 μm2 by introducing the following three key techniques.

Firstly, Toshiba and Sony expanded the trench bottom area using technology called bottle etching, while introducing high-permittivity Al203 coating for capacitor insulation. Capacitor volume per unit area has been boosted 60% as a result, and the companies secured the capacitor volume equivalent to that of an obsolete model, while reducing the size of a capacitor.

Secondly, the companies employed a hybrid architecture combining spin on dielectric (SOD) and high-density plasma Si02 coating for trench isolation. This architecture eased STI response, reduced joint leakage and improved charge retention property. The technology also enabled to embed high aspect ratio STI devices more easily than before.

Lastly, Toshiba and Sony used Ultra Shallow Buried Strap technology, which forms Ni-salicide at joints (straps) between capacitors and transistors. This technology reduced the dimensions of a strap part and removed additional processing previously needed for conventional process technology.


Previous
Next
Microsoft Post RAW Thumbnailer and Viewer        All News        Rambus to License XDR Technology to IBM
Toshiba Announces Portable and Stylish 17" Notebook     PC Parts News      Rambus to License XDR Technology to IBM

Get RSS feed Easy Print E-Mail this Message

Related News
Toshiba Reveals Fresh Canvio Portable Hard Drive Models
CES: Sony Presents New OLED TVs, Audio Products, Robot Car Image Sensors
Sony Unveils new Selfie Xperia XA2 and Xperia XA2 Ultra Smartphones
Toshiba Officially Unveils Mainstream RC100 NVMe SSD Series
Struggling Toshiba Sells Westinghouse to Brookfield
Toshiba Introduces the Symbio Smart Home Solution With Alexa Support
Toshiba to Unveil New RC100 NVMe and Portable XS700 SSDs at CES 2018
Semiconductors Sales to Rise in 2018
Toshiba to Prepare New Semiconductor Fabrication Facility
China Accelerates Domestic Memory Chips Fabrication
Samsung Now Mass Producing First 2nd-Generation, 10-Nanometer Class DRAM
Toshiba Introduces New AL15SE 10,500rpm Enterprise Performance HDD

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2018 - All rights reserved -
Privacy policy - Contact Us .