Monday, May 30, 2016
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Plextor To Showcase Its Gaming Grade SSDs at Computex 2016
Nvidia's GeForce GTX 1080 Launches Wordlwide
Corsair Bulldog PC Is Seeking A Place In Your Living Room
Samsung Galaxy C5 and C7 Released In China
SSD Adoption in Notebooks To Increase This Year As TLC NAND Market Matures
Samsung To Launch SamsungPay Mini Online Payments App
Facebook Publishers To Show Ads To Everyone
Samsung and Warner Bros. Release The Samsung Galaxy S7 edge Injustice Edition
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > Toshiba...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, June 15, 2005
Toshiba, Sony Jointly Develop 45 nm Embedded DRAM Technology


At the 2005 Symposium on VLSI Technology event, Toshiba Corp. and Sony Corp. announced an embedded DRAM process technology, which they have jointly developed at the 45 nm node.

The companies achieved the cell size of 0.069 μm2 by introducing the following three key techniques.

Firstly, Toshiba and Sony expanded the trench bottom area using technology called bottle etching, while introducing high-permittivity Al203 coating for capacitor insulation. Capacitor volume per unit area has been boosted 60% as a result, and the companies secured the capacitor volume equivalent to that of an obsolete model, while reducing the size of a capacitor.

Secondly, the companies employed a hybrid architecture combining spin on dielectric (SOD) and high-density plasma Si02 coating for trench isolation. This architecture eased STI response, reduced joint leakage and improved charge retention property. The technology also enabled to embed high aspect ratio STI devices more easily than before.

Lastly, Toshiba and Sony used Ultra Shallow Buried Strap technology, which forms Ni-salicide at joints (straps) between capacitors and transistors. This technology reduced the dimensions of a strap part and removed additional processing previously needed for conventional process technology.


Previous
Next
Microsoft Post RAW Thumbnailer and Viewer        All News        Rambus to License XDR Technology to IBM
Toshiba Announces Portable and Stylish 17" Notebook     PC Parts News      Rambus to License XDR Technology to IBM

Get RSS feed Easy Print E-Mail this Message

Related News
New Toshiba 8TB X300 Hard Disk Drive Released
Sony Sees Flat Annual Growth Due To Recent Quake Damages
Sony Improves Commercial LED Display Concept With New CLEDIS Technology
Sony Joins Forces with Cogitai to Conduct Research and Development for Artificial Intelligence
Sony To Resume Wafer Processing Operations After Earthquake
Sony Releases New Home Audio Products
Sony Reports Loss But PlayStation Keeps Performing Well
Key Samsung Technologies That Enabled 10nm-Class DRAM
Sony Confirms Manufacturing Operations Disruptions Following Kumamoto Earthquakes
Sony's Second Generation Optical Disc Archive System Is Faster And Goes Up to 3.3 TB
Kyushu Quakes Trouble Japan's Economy
Fujitsu, Vaio, Toshiba, Abandon PC Merger Plans

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2016 - All rights reserved -
Privacy policy - Contact Us .