Tuesday, March 20, 2018
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
IBM Sets Tera-scale Machine Learning Benchmark Record with POWER9 and GPUs
Panasonic's Technics Organizes First Full Turntable Orchestra
Samsung Introduces 8TB PM883 SATA SSD For Datacenters
AMD Announces Real-Time Ray Tracing For ProRender Rendering Engine and Radeon GPU Profiler 1.2
Microsoft Promises to Make Windows 10 Update Faster to Install
BlackBerry and Microsoft Partner to Secure Mobile Workforce
Facebook is Testing New Tools for Creators
Google Introduces Google Play Instant
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > Toshiba...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, June 15, 2005
Toshiba, Sony Jointly Develop 45 nm Embedded DRAM Technology

At the 2005 Symposium on VLSI Technology event, Toshiba Corp. and Sony Corp. announced an embedded DRAM process technology, which they have jointly developed at the 45 nm node.

The companies achieved the cell size of 0.069 μm2 by introducing the following three key techniques.

Firstly, Toshiba and Sony expanded the trench bottom area using technology called bottle etching, while introducing high-permittivity Al203 coating for capacitor insulation. Capacitor volume per unit area has been boosted 60% as a result, and the companies secured the capacitor volume equivalent to that of an obsolete model, while reducing the size of a capacitor.

Secondly, the companies employed a hybrid architecture combining spin on dielectric (SOD) and high-density plasma Si02 coating for trench isolation. This architecture eased STI response, reduced joint leakage and improved charge retention property. The technology also enabled to embed high aspect ratio STI devices more easily than before.

Lastly, Toshiba and Sony used Ultra Shallow Buried Strap technology, which forms Ni-salicide at joints (straps) between capacitors and transistors. This technology reduced the dimensions of a strap part and removed additional processing previously needed for conventional process technology.

Microsoft Post RAW Thumbnailer and Viewer        All News        Rambus to License XDR Technology to IBM
Toshiba Announces Portable and Stylish 17" Notebook     PC Parts News      Rambus to License XDR Technology to IBM

Get RSS feed Easy Print E-Mail this Message

Related News
Toshiba Adds 64-layer BiCS CD5, XD5 and HK6-DC Models to Data Center SSD Lineup
Western Digital to Inject $4.6bn in Toshiba Memory
Toshiba Completes Transfer of its TV Business to Chinese Hisense Group
New Sony a7 III 24MP Full Frame Mirrorless Camera Retails For Less Than $2,000
Toshiba Releases 2TB Hard Disk Drive for Notebooks
Sony's New Xperia XZ2 Supports 4K HDR Video Recording
Sony to Build Taxi-hailing System
New Sony Back-Illuminated CMOS Image Sensor Enables Global Shutter Function
Sony Announces Pricing for X900F and X850F Series 4K HDR Ultra HD TVs
Music and TV Sales Fuel Sony's Record Third Quarter Profit, Hirai to Step Down
Sony to Showcase New Creative and Technological Concepts at SXSW 2018
Toshiba Reveals Fresh Canvio Portable Hard Drive Models

Most Popular News
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2018 - All rights reserved -
Privacy policy - Contact Us .