Monday, February 08, 2016
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Google Has A Gear VR Competitor In The Works: report
Sony Xperia Z5 and Xperia Z5 Compact Are Now Shipping In The U.S.
Following Outcry, Twitter's Dorsey Says Live Tweets Are Here To Stay
Samsung Files Patent For A Vein-authentication System On A Smartwatch
BlackBerry Cuts 200 Jobs To Trim Costs
Taiwan Earthquake Temporarily Suspended TSMC's And UMC's Production
Samsung Loses Memory-Chip patent Trial Against Nvidia
Twitter Suspends Accounts To Combat Extremism
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
How to burn a backup copy of The Frozen Throne
Help make DVDInfoPro better with dvdinfomantis!!!
Copied dvd's say blank in computer only
menu making
 Home > News > PC Parts > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Monday, May 30, 2005
Samsung Produces 4-Gigabit NAND Flash Memory Using 70-nanometer Technology


Samsung Electronics has begun mass production of 4-Gigabit (Gb) NAND flash memory devices, taking advantage of the 70-nanometer process technology.

The faster technology offers larger storage densities for consumer and mobile applications at more affordable pricing.

Samsung's 4Gb NAND flash memory was first developed in September 2003. Following the New Memory Growth Model of double density growth every 12 months (conceived by Dr. Chang Gyu Hwang, president and CEO of Samsung Electronics Semiconductor Business), five generations of NAND flash memory have been introduced consecutively: 256Mb in 1999, 512Mb in 2000, 1Gb in 2001, 2Gb in 2002, 4Gb in 2003 and 8Gb in 2004.

The use of 70nm design technology to produce the 4Gb NAND flash enables Samsung to produce the industry's smallest memory cell size -- 0.025um/squared (25/1000 micrometers). An advanced Argon fluoride photo-lithography light source has been deployed to etch the finer circuitry permitted by the 70nm process.

According to teh company, Samsung's 70nm 4Gb NAND flash writes data at 16-megabytes per second, a 50 percent enhancement over a 90nm 2Gb device, thereby enabling real time data storage of high-definition (HD) video images.

Samsung also announced the first wafer-out at its new 300mm wafer fabrication line, one month ahead of schedule. The 300mm wafer line, Samsung's Line 14, initially will produce 4,000 wafer starts per month and gradually ramp up to 15,000 wafer starts by the end of 2005. Line 14 produces 70nm 4Gb NAND and 90nm 2Gb NAND flash memory.

According to market research firm Gartner Dataquest, 4Gb NAND flash will account for more than 30 percent of total expected sales of $8 billion in NAND flash memory this year.


Previous
Next
AOpen Debuts Dual-Core Chipset and ATX Pentium M Motherboards        All News        BAPCo Releases MobileMark 2005
AOpen Debuts Dual-Core Chipset and ATX Pentium M Motherboards     PC Parts News      BAPCo Releases MobileMark 2005

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung Loses Memory-Chip patent Trial Against Nvidia
768 Gbit Micron 3D NAND Is Faster Than Samsung’s 256Gb V-NAND: ISSCC
Samsung Describes Its 10nm SRAM
Samsung Galaxy S7 and S7 Edge Coming At February's Unpacked 2016 Event
LG's Home Appliances Business More Profitable Than Samsung's
Samsung Reports Drop In Profit For Q4
Samsung Said To Unveil Phone Upgrade Program
Samsung SDI to Invest In Automotive Battery Business
Samsung Gear S2 Classic New Edition Launches Globally
Court Bans Sales Of Some Samsung Phones in The U.S
Samsung Begins Mass Producing 4-Gigabyte HBM2 DRAM
Samsung Announces Mass Production of 2nd Generation 14-Nanometer FinFET Logic Process Technology

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2016 - All rights reserved -
Privacy policy - Contact Us .