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Wednesday, April 20, 2005
Samsung Develops 4Gb OneNAND


Samsung Electronics has announced that it has developed a 4 Gb (Gigabit) OneNAND Flash memory device for multimedia phones.

According to the company, the device has micro-compact dimensions, low power consumption, high performance and high density. The 4 Gb, 11mm x 13mm x 1.4 mm memory device operates on 1.8V and is able to deliver sustained data read speed of about 108 MB/s and a write speed of 10 MB/s. It can store about 250 sequential photographs from a 5-megapixel camera phone, or up to 120 music files.

The 4 Gb OneNAND memory is a quad die package (QDP) developed by stacking four 1 Gb OneNAND memory chips in a 90 nanometer production process. The company expects OneNAND to gain popularity as it is designed to power 3G mobile phones, advanced PDAs, a new generation of portable gaming systems and the high-performance digital cameras.

"In addition to recently announced advances in next-generation mobile DRAM and multi-chip package (MCP) memory, the new 4Gb OneNAND will help to solidify our leadership position in the rapidly expanding mobile convergence market"said Tom Quinn, senior vice president of sales and marketing for Samsung Semiconductor.

Samsung currently has a range of OneNAND flash memory sizes ranging from 128 Mb to 4 Gb, with software that will optimise it for mobile operating systems, including Symbian and Linux. The company plans to begin mass production of the memory device in July.


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