Wednesday, December 13, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Samsung Patents 'Double-sided' Smartphone
Apple Invests in FaceID Component Maker Finisar
Corsair Launches 4GHz DDR4 SODIMM 32GB Memory Kit
Google's Year in Search
Google Opening Artificial Intelligence Research Center in China
AT&T is Testing Broadband Internet Over Power Lines
Toyota and Panasonic to Start Study on Automotive Prismatic Battery Business
Shuttle SZ270R9 Mini PC Has a LED Front Panel
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > Toshiba...
Last 7 Days News : SU MO TU WE TH FR SA All News

Monday, April 04, 2005
Toshiba's 2G XDR DRAM Offers Data Rates of 4.8-6.4Gbps


Toshiba has started sample shipments of its second-generation 512Mb XDR DRAM, offering operating speeds of 4.8 to 6.4 Gbps at each pin, the fastest data transfer rate yet attained by any memory device.

The product is targeted at applications such as digital home appliances, high-performance 3D graphics boards and network systems.

The TC59YM916BKG is the second-generation DRAM product embedded with an XDR interface developed by Rambus, Inc of the US. The first-generation XDR DRAM product only achieved a peak operating speed of 3.2Gbps per pin. The TC59YM916BKG transfers data at 4.8GHz with a 1.8V VDD and supports peak operation of 6.4GHz: four times faster than the performance of 1.6GHz graphic double data rate (GDDR) memory chips and 12 times faster than best-in-class 533MHz PC memories.

To boost operating speeds, the 2G XDR DRAM product utilizes octal data rate (ODR) technology, which transfers eight data per clock cycle. In the new product's specifications, Toshiba said it has achieved a peak operating speed of 4.8Gbps when using a 600MHz clock rate. The company also said it has confirmed a peak operating speed of 6.4Gbps when using an 800MHz clock rate. The memory device is based on 0.2V differential rambus signal level (DRSL) technology.

The power source voltage of the TC59YM916BKG is +1.8V. The minimum row cycle time (tRC) is 40ns. The package uses 1.27 x 0.8mm BGA to support PWBs with the smaller number of layers. The configuration is 4Mb word x 8 banks x 16 bits. The interface is x4/x8/x16 programmable.

According to Shozo Saito, vice president of Memory Division, Semiconductor Company at Toshiba Corp, the company plans to mass-produce the second-generation 512Mb XDR DRAMs in the second half of 2005 in order to secure its leading position in this business area.

From NE Asia Online



Previous
Next
Japan's RIAA wins appeal        All News        JVC Develops World's First Single-sided, Dual Layer DVD-RW Disc Technology
Rambus Proposes Micro-Threading to Boost GDDR Performance.     PC Parts News      Toshiba announces affordable Satellite M35X notebook with new features

Source Link Get RSS feed Easy Print E-Mail this Message

Related News
Toshiba and Western Digital Reach Settlement, Agree to Strengthen Flash Memory Collaboration
Toshiba and Western Digital Close to Agreement Over Memory Chip Sale
Toshiba Moving Closer to Deal With Western Digital
Toshiba Launches First 14TB HDD with Conventional Magnetic Recording
Toshiba Releases 10TB NAS-Class Hard Drive
Toshiba Unveils 2TB XG5-P NVMe SSD
Toshiba Offers New 10TB Surveillance Hard Disk Drive
Toshiba's Board Approves $5 billion Injection to Stay Listed
Asus Could Buy Toshiba's PC Business
Toshiba Sells TV, Visual Solutions Unit to Chinese Hisense
Toshiba's Profit Jumps on Strong Memory Demand
Toshiba's Shareholders Approve Sale of Toshiba Memory

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .