Sunday, March 01, 2015
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Crafted from Metal and Glass, Samsung Galaxy S6 and Galaxy S6 Edge Are Here
MWC: SanDisk Introduces New Mobile Flash Drives, iNAND 7132 Storage Solution And 200GB microSDXC Card
MWC: New Tablets By Lenovo
Firefox OS Expands with More Partners, Devices
MWC: MediaTek Releases SoCs For Smartphones And Tablets
HP Introduces The Spectre x360 Convertible PC
Acer Unveils Windows Phone 10-ready smartphone At MWC
New ZTE Grand S3 Smartphone Offers EyeVerify Authentication
Active Discussions
Need serious help!!!!
burning
nvidia 6200 review
Hello
Burning Multimedia in track 0
I'm lazy. Please help.
sanyo e6 camera
need help on some cd burning...
 Home > News > PC Parts > Toshiba...
Last 7 Days News : SU MO TU WE TH FR SA All News

Monday, April 04, 2005
Toshiba's 2G XDR DRAM Offers Data Rates of 4.8-6.4Gbps


Toshiba has started sample shipments of its second-generation 512Mb XDR DRAM, offering operating speeds of 4.8 to 6.4 Gbps at each pin, the fastest data transfer rate yet attained by any memory device.

The product is targeted at applications such as digital home appliances, high-performance 3D graphics boards and network systems.

The TC59YM916BKG is the second-generation DRAM product embedded with an XDR interface developed by Rambus, Inc of the US. The first-generation XDR DRAM product only achieved a peak operating speed of 3.2Gbps per pin. The TC59YM916BKG transfers data at 4.8GHz with a 1.8V VDD and supports peak operation of 6.4GHz: four times faster than the performance of 1.6GHz graphic double data rate (GDDR) memory chips and 12 times faster than best-in-class 533MHz PC memories.

To boost operating speeds, the 2G XDR DRAM product utilizes octal data rate (ODR) technology, which transfers eight data per clock cycle. In the new product's specifications, Toshiba said it has achieved a peak operating speed of 4.8Gbps when using a 600MHz clock rate. The company also said it has confirmed a peak operating speed of 6.4Gbps when using an 800MHz clock rate. The memory device is based on 0.2V differential rambus signal level (DRSL) technology.

The power source voltage of the TC59YM916BKG is +1.8V. The minimum row cycle time (tRC) is 40ns. The package uses 1.27 x 0.8mm BGA to support PWBs with the smaller number of layers. The configuration is 4Mb word x 8 banks x 16 bits. The interface is x4/x8/x16 programmable.

According to Shozo Saito, vice president of Memory Division, Semiconductor Company at Toshiba Corp, the company plans to mass-produce the second-generation 512Mb XDR DRAMs in the second half of 2005 in order to secure its leading position in this business area.

From NE Asia Online



Previous
Next
Japan's RIAA wins appeal        All News        JVC Develops World's First Single-sided, Dual Layer DVD-RW Disc Technology
Rambus Proposes Micro-Threading to Boost GDDR Performance.     PC Parts News      Toshiba announces affordable Satellite M35X notebook with new features

Source Link Get RSS feed Easy Print E-Mail this Message

Related News
Toshiba Develops Multicore SoC For Image-Recognition Applications
Toshiba Launches 8 Megapixel CMOS Image Sensor for Smartphones and Tablets
Toshiba Introduces New APs For For IoT Solutions
Toshiba Achieves 1Tbit per Square Inch Areal Density in a 2.5-Inch Hard Disk Drive
Toshiba, SK Hynix, To Accelerate Development of Nano Imprint Lithography
Toshiba Announces Encrypted USB Flash Drive
Compal To Take Over Toshiba's TV Business
Toshiba Reorganization to Strengthen IoT-Related Business
Toshiba Develops Cloud System for Instantaneous Remote Control of One Million Devices
Toshiba Launches NFC Built-in SDHC Memory Card
Toshiba Launches 3TB 2.5-inch HDD, Showcases First PCIe Single Package SSD
Toshiba Adds New Models To Click and Encore Families

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2015 - All rights reserved -
Privacy policy - Contact Us .