Elpida Memory, Inc. (Elpida), Japan's leading global
supplier of Dynamic Random Access Memory (DRAM), announced new
256 Megabit DDR2 SDRAM devices that achieve 800 Mbps) operation.
The monolithic devices are available in either x 8- or x 16-bit widths and are intended for use in
DDR2 Unbuffered Dual In-line Memory Modules (DIMMs) targeted for the high-end PC market.
The devices underwent evaluation and have gained the support of several Taiwanese module
manufacturers, A-DATA Technology and Transcend Information Inc.
"As a module maker, we require cutting-edge, high-performance DRAM devices that keep us
at ahead of market demand," said Simon Chen, Chairman of A-DATA. "Elpida's 256 Megabit
DDR2 800 Mbps devices provide superior performance allowing us to meet the speed
demands dictated by our high-end PC customers, especially those in niche markets such as
"800 Mbps is a major milestone for DDR2 SDRAM," said Jun Kitano, Director of Technical
Marketing for Elpida Memory (USA). "It is an ideal match for the latest processor front-side
bus, allowing PCs to maximize data throughput at a rate that is faster than ever before
possible. Elpida's ability to offer customers advanced DRAM products reinforces our position
as industry leader in DRAM development and technology."
800 Mbps 256 Megabit DDR2 SDRAM - Technical Details
Elpida's 256 Megabit DDR2 devices (Part numbers: EDE2508ABSE, EDE2516ABSE) are
organized as 8M words x 8-bits x 4 banks and 4M words x 16-bits x 4 banks, respectively.
They are produced using Elpida's advanced 0.10-micron process technology and are available
in 60-ball FBGA (EDE2508ABSE) and 84-ball FBGA (EDE2516ABSE) packages. The devices
feature low, 1.85 volt operation with a burst length of 4, 8 and CAS Latency (CL) of 5.
Elpida's 256 Megabit, x 8-bit DDR2 SDRAM device is (Part number: EDE2508ABSE,)
currently sampling to customers. The x 16-bit device (Part number: EDE2516ABSE) samples
will be available in early April 2005. Volume production for both devices is expected in May