Sunday, August 20, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
YouTube TV expands to new markets
Facebook Tests News Stories Customized to Users' Interests
Google Home Now Supports Free Calls
Asus Unveils the ZenFone 4 Pro, ZenFone 4, ZenFone 4 Selfie Pro, and ZenFone 4 Selfie
Nokia 8 Shipped With ZEISS Optics
Apple is Getting Serious in TV Shows and Film Prospect
Acer's New 4K Projectors Bring the Benefits of Cinema Home
Fiat Chrysler Joins BMW, Intel, Mobileye in Autonomous Driving Team
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > NEC unv...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, March 08, 2005
NEC unveils 90-Nanometer embedded DRAM technology


New ZrO2 dielectric material increases performance of CMOS-compatible embedded DRAM

NEC Electronics Corporation announced its new metal insulator metal (MIM) technology for 90 nanometer (nm) embedded DRAM (eDRAM), called MIM2. In addition, to meet the technical challenges presented by moving the company's established CMOS-compatible eDRAM technology to a 90 nm process, NEC Electronics, ahead of other vendors, has adopted the use of zirconium oxide (ZrO2), a new dielectric material with a higher-k factor that allows the embedded DRAM's smaller bit cells to retain storage capacitance. With this new ZrO2 technology, NEC Electronics, a leader and pioneer of CMOS-compatible eDRAM, is well positioned to move its eDRAM technology to even smaller process geometries as it evolves.

The new dielectric material and MIM2 technology enable NEC Electronics to deliver robust eDRAM solutions with smaller cell sizes and higher memory integration, ample storage capacitance and lower cell heights, all the while maintaining the merits of existing eDRAM technology, such as CMOS-compatibility, low power and high-speed random access to the eDRAM.

NEC Electronics' eDRAM technology provides a wide range of macro variants, ranging from the high performance to the low power consumption required by a variety of applications, including high-end networking devices and consumer electronics products such as cell phones, mobile handheld devices and gaming/entertainment devices. The full macro lineup for NEC Electronics' 90 nm ASIC series, CB-90, is scheduled to be ready by September 2005. (Availability is subject to change without notice.) More information can be found at www.necelam.com/eDRAM90.


Previous
Next
NVIDIA expands comprehensive toolkit for game developers        All News        Intel warned by Japan antitrust watchdog
Intel unveils new NOR flash products and roadmap     PC Parts News      Intel, Other Industry Leaders Announce Final CE-ATA 1.0 Spec

Get RSS feed Easy Print E-Mail this Message

Related News
LG G6 Plus Model Gets 128GB Memory Boost
Samsung is Launching Samsung Connect Home Smart Wi-Fi System
TAG Heuer Connected Modular 45 Smartwatch Costs $1,600, Has An Intel Mobile Chip Inside
Minecraft: Education Edition will launch November 1
NEC Uses Artificial Intelligence to Automatically Detect Unknown Cyber-attacks
IBM Scientists Achieve Storage Memory Breakthrough
Hyundai Motor and Cisco To Cooperate On Connected Cars
Samsung Adds Intelligence And Connectivity To Your Car With Samsung Connect Auto
Open Connectivity Foundation Established To Promote Interoperability Of IoT Devices
Patriot Introduces 128GB Compact USB Flash Drives
Memory-Tech Ready To Start Mass Production Of UHD Blu-ray Disc
Patriot Releases Viper Elite DDR4 Memory

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .