Saturday, December 16, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Samsung Galaxy A8, A8 Plus and LG K Series to Appear at CES
North Korea Behind attacks on Cryptocurrency Exchanges: report
BlackBerry Ends Support for Priv, Talks About the Future of BB10
Google to Shut Down Project Tango in March 2018
Facebook Admits Spending Time on Social Media is Bad for You
Facebook Will Start Putting Ads Before Videos
Samsung's Smart Speaker Coming Next Year
Internet Neutrality is Officially Dead
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > Elpida ...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, January 18, 2005
Elpida Integrates Error Correction Circuit in DRAM


Elpida Memory, Inc has developed SSR (Super Self Refresh) technology which achieves a reduction in DRAM's self refresh current to about 1/60 that of the company's conventional product.

The company has also developed a 256-Mbit DDR synchronous DRAM (SDRAM) product, the EDD2516KCTA, using this technology. Elpida said this chip achieves the lowest self refresh current in the DDR SDRAM industry.

In an effort to reduce self refresh current, Elpida broadly extended the conventional model's internal refresh interval. When extending the refresh interval in the conventional DRAM, charge in capacitors becomes lost during the longer interval, and therefore causes imprecise readings. However, Elpida discovered that data only becomes garbled within some memory cells, which have a poor ability to preserve charge. The company accordingly integrated an error correction circuit in a DRAM device so that it could correct the data that becomes garbled under a longer refresh interval.

The EDD2516KCTA's data rate complies with DDR400. In other words, the maximum data rate per pin is 400Mbps. The company expects it to be used in applications such as car navigation systems, PDAs and Flash EEPROM discs. Its self refresh current (IDD6) is as low as 40m?A at 25 degrees, 150m?A at 70 degrees and 250muA at 85 degrees, compared to a large 3mA required by the conventional product (DDR SDRAM) at 0-70 degrees.

Production of the EDD2516KCTA uses 110nm CMOS process technology. The company has already started sample shipments, with volume production slated to start in March 2005. A 512Mb product, an MCP of this 256Mb chip, is also available.

From NE Asia Online



Previous
Next
Datawrite Media - CDRinfo's Tests        All News        HP rolls out Itanium 2 servers
AMD Reports Fourth Quarter and Annual Results     PC Parts News      AMD Announces Turion Processor

Source Link Get RSS feed Easy Print E-Mail this Message

Related News
Samsung, SK Hynix and Micron Lead the Server DRAM Market
DRAM an NOR Memory Fueled Second Quarter Semiconductor Growth Rate
Samsung Chips Set to Beat Intel in Q2
SK Hynix and Micron Try To Catch up With Samsung in 10nm DRAM Production
Chip Industry "Threatened" by Chinese Players
Samsung's DRAM Roadmap
SSDs and RAM Prices To Crash in 2019
Micron's 1xnm DRAM Process Has Low Yields, Says Report
Micron Establishes New Back-end Site DRAM in Taiwan
Memory Prices To Raise Due To Tight Supply
SK Hynix Develops Its First 10nm DRAM
Samsung Dominates The Global Mobile DRAM Market

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .