Tuesday, April 24, 2018
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
First-Quarter Lobbying Expenditures: Google, AT&T, Comcast and Comcast Remain Top Spenders
Samsung Launches Six Original Series on Samsung VR Video Service on Gear VR
Facebook Says Users Are Not Products, the Social Network Is
European Regulators Investigate Apple's Proposed Acquisition of Shazam
Amazon is Working on Home Robots: report
7nm Volume Production to Fuel TSMC's Profits This Year
Toshiba Weighs Memory Chip Unit Options
Google Chat Launches to compete with Apple's iMessage
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > General Computing > Toshiba...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, December 15, 2004
Toshiba and NEC Develop Key Technologies for High-Density MRAM


Toshiba Corporation and NEC Corporation today announced two key advancements toward development of a magnetoresistive random access memory, a technology seen as key to the development of future generations of high performance mobile equipment.

Unveiling the latest fruits of a joint development program dating back to 2002, the two companies announced a new cell design that halves power consumption during data writes and cuts writing errors, and a novel MRAM architecture with high speed characteristics and a performance that will support development of high-density devices.

Full details of the new technology were presented on December 14 at IEDM (International Electron Devices Meeting) 2004 in San Francisco, USA.

The features of MRAM are fast read/write, high density, unlimited endurance and non-volatility?the ability to retain data when switched off. While MRAM show great promise for application in mobile information equipment, cell size and power consumption must be reduced, and no loss of operating speed achieved, before commercial application is possible. The advancements reported by NEC and Toshiba point the way forward.

NEC and Toshiba reduced write current by developing a new shape for the magnetic tunneling junction (MTJ) that stores information in the cell. The MTJ shape is similar to the standard rectangular shape, but with arc-shaped bulges on both sides, in the middle of the longer length. Seen from above, the outline of the shape resembles a coin placed on a rectangle. With this new design, write current is approximately half that of present MRAM, and writing errors are reduced, even if there is some fluctuation in the switching characteristics of each memory cell. (Please refer to the figure 1.)

Toshiba and NEC have also developed highly promising new cell architecture. Research to date has produced two basic proposals on MRAM cell structure. The first of these couples each cell with a transistor, which advances read times, but at a cost in increased cell size. The second, the cross point (CP) structure, removes the transistor from each individual cell, a move that reduces cell size, but read access time gets longer and read errors occur due to generation of sneak current, the tendency of current to be directed to the unselected cell. Toshiba and NEC have realized a high-speed CP cell structure that uses one transistor to control four cells. This achieves a cell that is the same size as a standard DRAM cell and conventional CP cell, and much smaller than an MRAM cell with transistor. (Please refer to figure 2.) The new architecture also achieves a 250 nanosecond read time, four times faster than the conventional CP cell structure.

Through continued joint development, Toshiba and NEC aim to define fundamental technologies required for realizing a 256 megabit MRAM, utilizing MTJ based on 250 nanometer design rule and CMOS technologies based on 130-180 nanometer design rules by fiscal year 2005.

Development of the new MRAM technologies was supported by grants from Japan's New Energy and Industrial Technology Development Organization (NEDO).

From eMediaLive



Previous
Next
Sony, Samsung to cross-license patents        All News        NexFlash Unveils Serial Flash Memory with Boot-Block Features
Sony, Samsung to cross-license patents     General Computing News      Seagate's 5GB Pocket HDD Now Available In Europe

Source Link Get RSS feed Easy Print E-Mail this Message

Related News
Toshiba Weighs Memory Chip Unit Options
Toshiba Releases New Surveillance, Video Streaming Laptop and Desktop Hard Drives
China Opposes SK hynix-Toshiba Deal
Toshiba Delays Memory Chip Unit Sale
Toshiba Memory to Make New Investment in Production Equipment for Fab 6 at Yokkaichi Operation
Toshiba Launches KumoScale NVM Express over Fabrics Storage Software for Cloud Infrastructures
Toshiba Adds 64-layer BiCS CD5, XD5 and HK6-DC Models to Data Center SSD Lineup
Western Digital to Inject $4.6bn in Toshiba Memory
Toshiba Completes Transfer of its TV Business to Chinese Hisense Group
Toshiba Releases 2TB Hard Disk Drive for Notebooks
Toshiba Reveals Fresh Canvio Portable Hard Drive Models
HARMAN and Samsung Unveil Connectivity and Autonomous Driving Technology at CES 2018

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2018 - All rights reserved -
Privacy policy - Contact Us .