Saturday, August 19, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
YouTube TV expands to new markets
Facebook Tests News Stories Customized to Users' Interests
Google Home Now Supports Free Calls
Asus Unveils the ZenFone 4 Pro, ZenFone 4, ZenFone 4 Selfie Pro, and ZenFone 4 Selfie
Nokia 8 Shipped With ZEISS Optics
Apple is Getting Serious in TV Shows and Film Prospect
Acer's New 4K Projectors Bring the Benefits of Cinema Home
Fiat Chrysler Joins BMW, Intel, Mobileye in Autonomous Driving Team
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > AMD, IB...
Last 7 Days News : SU MO TU WE TH FR SA All News

Monday, December 13, 2004
AMD, IBM Announce Semiconductor Manufacturing Technology Breakthrough


Industry-First Advancement Can Improve Performance, Conserve Power in Future Single- and Multi-Core Processors

AMD (NYSE:AMD) and IBM today announced that they have developed a new and unique strained silicon transistor technology aimed at improving processor performance and power efficiency. The breakthrough process results in up to a 24 percent transistor speed increase, at the same power levels, compared to similar transistors produced without the technology.

Faster, more power-efficient transistors are the building blocks of higher performance, lower power processors. As transistors get smaller, they operate faster, but also risk operating at higher power and heat levels due to electrical leakage or inefficient switching. AMD and IBM's jointly developed strained silicon helps overcome these challenges. In addition, this process makes AMD and IBM the first companies to introduce strained silicon that works with silicon-on-insulator (SOI) technology, resulting in an additive performance and power savings benefit.

"Innovative process technologies such as strained silicon enable AMD to deliver more value to our customers," said Dirk Meyer, executive vice president, Computation Products Group, AMD. "Our shared progress in developing advanced silicon technologies allows AMD to deliver today's best performance per watt, and this strained silicon development is expected to extend that leadership when we begin shipping the dual-core AMD Opteron(TM) processor in mid-2005."

AMD intends to gradually integrate the new strained silicon technology into all of its 90nm processor platforms, including its future multi-core AMD64 processors. AMD plans to ship the first 90nm AMD64 processors using the technology in the first half of 2005.

IBM plans to introduce the technology on multiple 90nm processor platforms, including its Power Architecture-based chips, with the first products slated to begin shipping in the first half of 2005.

"Innovation has surpassed scaling as the primary driver of semiconductor technology performance improvements," said Lisa Su, vice president of technology development and alliances, IBM Systems & Technology Group. "This achievement with AMD demonstrates that companies willing to share their expertise and skills can find new ways to overcome roadblocks and help lead the industry to the next generation of technology advancements."

The new strained silicon process, called "Dual Stress Liner," enhances the performance of both types of semiconductor transistors, called n-channel and p-channel transistors, by stretching silicon atoms in one transistor and compressing them in the other. The dual stress liner technique works without the introduction of challenging, costly new production techniques, allowing for its rapid integration into volume manufacturing using standard tools and materials.

AMD and IBM researchers are the first in the industry to simultaneously enhance the performance of both types of transistors in a semiconductor using conventional materials.

"This breakthrough in strained silicon engineering is a result of our joint development alliance and the efforts of our partnered teams at IBM's facility in New York and AMD's facility in Germany," said Nick Kepler, vice president of logic technology development, AMD. "This is a better way to deliver the performance enhancements and power reduction that AMD Opteron(TM) and AMD Athlon(TM) 64 processor customers expect."

Details of the AMD-IBM Dual Stress Liner innovation will be disclosed at the 2004 IEEE International Electron Devices Meeting in San Francisco, Calif. from December 13-15, 2004. The Dual Stress Liner with SOI technology was developed by engineers from IBM, AMD, Sony and Toshiba at IBM's Semiconductor Research and Development Center (SRDC) in East Fishkill, NY, as well as engineers from AMD at its Fab 30 facility in Dresden, Germany.

IBM and AMD have been collaborating on the development of next-generation semiconductor manufacturing technologies since January 2003.


Previous
Next
Hitachi One-Inch Hard Drive Turns Five        All News        Samsung Electronics Develops Removable, Thumbnail-Sized Memory Card for Mobile Phones
AMD Orders Applied Materials Systems to Equip 300mm Fab     PC Parts News      AMD banks on dual-core

Get RSS feed Easy Print E-Mail this Message

Related News
AMD Radeon RX Vega Graphics Cards and Radeon Packs Available Now
IBM Claims Record Deep Learning Performance
AMD Launches the Ryzen Threadripper High End Desktop Processors
New Sony Magnetic Tape Storage Technology Supports High-Capacity 330 TB Recording
AMD's new Threadripper 1900X Costs $549
AMD's Radeon RX Vega 64 will cost $499, Radeon RX Vega 56 is $100 Cheaper
AMD Completes Ryzen Mainstream Desktop Lineup with the Affordable Ryzen 3 processors
GPUs and Ryzen Processors Help AMD's Financial Figures
IBM Z Mainframe Features Pervasive Data Encryption
AMD Tests Memory Overclocking On Ryzen Systems
AMD's 16-core Threadripper Arrives Next Month for $999
AMD Unveils AMD4U for Gamers and Content Creators with Square Enix and Adobe

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .