Sunday, October 26, 2014
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Panasonic to Offload Sanyo's North America TV Business
Google's Pichai to Become Head of Product at Google: report
Internet Explorer 11 Toolkit Allows Enterprise Admins "Spy" On Their Employees
FCC Says Airwave Auction To Delay Until 2016
HP Broadens Moonshot Portfolio With Intel-powered Models
Microsoft To Keep Nokia Brand For Low-end Smartphones
LG Introduces Its First Octa-Core Application Processor
Cloud and Surface 3 Drive Microsoft's Revenue
Active Discussions
Copied dvd's say blank in computer only
How to generate lots of different CDs quickly
Yamaha CRW-F1UX
help questions structure DVDR
Made video, won't play back easily
Questions durability monitor LCD
Questions fungus CD/DVD Media, Some expert engineer in optical media can help me?
CD, DVD and Blu-ray burning for Android in development
 Home > News > General Computing > IBM shr...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, December 07, 2004
IBM shrinks SRAM cells, triples transistor performance


IBM said that it has built the world's smallest SRAM cell and demonstrated for the first time transistors built with strained germanium that can deliver three times the performance of today's transistors.

Providing an outlook three SRAM generations ahead, IBM said that its memory cell is about ten times smaller than those of common SRAM cells available on the market today, which measure around 1 ?m2. IBM's said that the cell also is about half the size of the smallest experimental cell reported to date and cut fit 50,000 of those cells on circular end of a human hair. The company said that it will provide further details about the technology at the upcoming International Electron Devices Meeting in December.

IBM is not alone in the field of shrinking SRAM cells to be able to increase SRAM capacity especially in processors. Texas Instruments announced earlier this year, that it produced a 0.49 ?m2 SRAM cell in 65 nm process technology with about 930,000 logic gates per mm2.

IBM on Monday also said that it has demonstrated a technique that triples the performance of a standard transistor used in semiconductors by creating a layer of germanium in the portion of the transistor through which electrical current flows, called the "channel." Germanium has long been known to have better conductivity than silicon, and the strain in the germanium layer created by IBM's process leads to further performance gains, the company said.

The introduction of a new material like germanium in the critical areas of the integrated circuits provides an alternative means of improving chip performance from the traditional method of simply shrinking circuitry, according to IBM. The company hopes that this new technique will help to achieve performance improvements in chips with circuit sizes of 32 nm and smaller.


Previous
Next
Orange unveils 3G phones        All News        Lite-On IT may face prism shortage
Fujitsu and Cisco Form Strategic Alliance     General Computing News      Fujitsu Increases Mobile Hard Disk Drive Performance

Source Link Get RSS feed Easy Print E-Mail this Message

Related News
Glonbalfoundries Buy IBM's Micorelectronics Business
New IBM Tape Cartridge Holds 10TB Uncompressed Data
IBM and SAP Partner On Enterprise Cloud
IBM Claims New OpenPOWER-Based Systems Are Superior Alternative to x86-Based Servers
Lenovo Set to Close Acquisition of IBM's x86 Server Business
IBM Offers Watson Data Tool To the Mainstream
IBM and Intel Bring New Security Features to the Cloud
IBM Tries To Strengthen Its Presence In China With Local Vendor Deal
U.S. Regulators Clear Sale Of IBM's Server Business to Lenovo
New IBM Chip Simulates Brain Functions
IBM Offered Globalfoundries 1bn Dollars To Take Chip unit: report
IBM Talks With Globalfoundries Stall Over Price: report

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2014 - All rights reserved -
Privacy policy - Contact Us .