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Friday, November 19, 2004
Elpida Memory Develops First 1 Gigabit DDR2 SDRAM Device at 800 Mbps Operation


Working Silicon Achieves Maximum Speed Performance Targeting High-End Servers.

TOKYO, November 18, 2004 - Elpida Memory, Inc., Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced silicon development of the industry's first 1 Gigabit DDR2 SDRAM device at 800 Megabits per second (Mbps) operation (DDR2-800). The device surpassed the maximum speed currently available for high-end server applications- the DDR2-667 specification which is currently under consideration by JEDEC.

The device uses high-performance transistors with 100 nm process technology, and also has an optimized layout design that reduces speed bottlenecks on the signal and data paths in the memory array and peripherals-this allows for 800 Mbps operation even in a high-density, 1 Gigabit device. These advancements in process and design allow Elpida to create a device that matches the high-speed, high-density, low-power requirements demanded by performance-driven markets.

"This 1 Gigabit device running at 800 Mbps speed was made possible by utilizing 100 nm process DRAM combined with a superior layout design," said Yukio Sakamoto, president of Elpida Memory. "Future DRAM products demand improvements in power and speed to offer the significant performance gains that are crucial to the high-end server market. Elpida's latest achievement demonstrates that we have the technical capabilities to meet this challenge."

The market is not ready for such advanced products in applications today; however, Elpida has the ability to offer DDR2-800 devices based on market demand.



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